BSS192P H6327 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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BSS192P H6327
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حجم فایل
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68.498
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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8
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مشخصات فنی
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RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Infineon Technologies BSS192PH6327FTSA1
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
1W
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Total Gate Charge (Qg@Vgs):
6.1nC@10V
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Drain Source Voltage (Vdss):
250V
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Input Capacitance (Ciss@Vds):
104pF@25V
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Continuous Drain Current (Id):
190mA
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Gate Threshold Voltage (Vgs(th)@Id):
2V@130uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
12Ω@10V,190mA
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Package:
SOT-89-3
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Manufacturer:
Infineon Technologies
